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2MHz, High-Brightness LED Drivers with
Integrated MOSFET and High-Side Current Sense
ABSOLUTE MAXIMUM RATINGS
IN, CS, LX, DIM to GND .........................................-0.3V to +70V
TEMP_I to GND .......................................................-0.3V to +6V
PGND to GND ......................................................-0.3V to +0.3V
CS to IN .................................................................-0.3V to +0.3V
Maximum Current into Any Pin
(except IN, LX, and PGND).............................................20mA
Continuous Power Dissipation (T A = +70°C)
8-Pin SO (derate 7.4mW/°C above +70°C)...............588.2mW
Junction-to-Ambient Thermal Resistance ( θ JA ) (Note 1) ...136°C/W
Pin-to-Pin ESD Ratings......................................................±2.5kV
Operating Temperature Range
350mA (max) Output Current ........................-40°C to +125°C
500mA (max) Output Current ........................-40°C to +105°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, see www.maxim-ic.com/thermal-tutorial .
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V IN = +24V, V DIM = V IN , T A = T J = -40°C to +125°C, unless otherwise noted. Typical values are at T A = +25°C.)
PARAMETER
Input-Voltage Range
SYMBOL
V IN
CONDITIONS
MIN
6.5
TYP
MAX
65
UNITS
V
Ground Current
Supply Current
No switching
V DIM < 0.6V, V IN = 12V
1.5
350
mA
μA
UNDERVOLTAGE LOCKOUT (UVLO)
Undervoltage Lockout
UVLO
V CS = V IN - 100mV, V IN rising from 4V
until V LX < 0.5V IN
6.25
6.5
V
V CS = V IN - 100mV, V IN falling from 6.5V
until V LX > 0.5V IN
6
Undervoltage-Lockout Hysteresis
SENSE COMPARATOR
0.5
V
Sense Voltage Threshold High
Sense Voltage Threshold Low
V SNSHI
V SNSLO
MAX16822A, V IN - V CS rising from 140mV
until V LX > 0.5V IN
MAX16822B, V IN - V CS rising from 140mV
until V LX > 0.5V IN
MAX16822A, V IN - V CS falling from
260mV until V LX < 0.5V IN
MAX16822B, V IN - V CS falling from
260mV until V LX < 0.5V IN
201
218
185
166
210
230
190
170
216
236
198
180
mV
mV
Propagation Delay to Output High
Propagation Delay to Output Low
CS Input Current
t DPDH
t DPDL
I CSIN
Falling edge of V IN - V CS from 140mV to
260mV to V LX > 0.5V IN
Rising edge of V CS - V IN from 260mV to
140mV to V LX < 0.5V IN
V IN - V CS = 200mV
50
50
3.5
ns
ns
μA
2
_______________________________________________________________________________________
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